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A possibility to introduce phosphorus in silicon, different from direct phosphorus ion implantation, is discussed. The method is based on the nuclear reaction 30 Si(p,γ) 31 P that occurs when a silicon sample is bombarded with energetic protons. It is shown that the pattern of the phosphorus concentration profile can be accurately controlled through an appropiate choice of...
Mass spectrometric investigations of homologous micro-clusters (n=<6) of carbon disulphide are studied by using an electron impact ion source and a double focusing sector field mass spectrometer. Clusters are produced by adiabatic gas expansion of mixture of CS 2 vapour and Ar. The appearance potentials for ions (CS 2 ) n S + , (CS 2 ) n CS +...
The spectral density function of the channel electron multiplier noise has been investigated. The existence of flicker noise (1/f α ) has been shown. Changes of the exponent α versus the multiplier current have been observed and the relationship between them has been established.
Surface damage formation on the Ni (100) and Ni (111) surfaces induced by Ar + ion bombardment at low energy (0.1-1.2keV) and small doses (<5x10 15 ion/cm 2 ) was studied with LEED. The degradation of the diffraction spot intensities was measured directly during ion bombardment. Using the procedure of Jacobson and Wehner for description of the exponential intensity/dose...
This paper is a review of the thermal stability of state-of-the-art transition metal nitride thin films synthesized by physical vapour deposition techniques. Nitrides are successfully applied as wear-protection coatings for tools and mechanical components, decorative coatings, electrical contacts, and diffusion barriers in electronic devices. The aspects for thermal stability are on phase equilibrium,...
Plasma-polymerized diphenyl (PPDP) thin films were prepared by glow discharge technique. The PPDP films were characterized by scanning electron microscopy (SEM), elemental analysis, infrared (IR) spectroscopy, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). The surface morphology of the PPDP film is observed to be uniform and pinhole-free. The IR analysis reveals that...
Thin films of HgTe were thermally, flash, evaporated onto glass substrates at room temperature. The structural investigations showed that stoichiometric and amorphous films were produced. The electrical resistivity, thermoelectric power and space charge characteristics were also studied at room and elevated temperatures. The measurements indicated that HgTe thin films behave as a p-type semiconductor...
Pd/n-GaAs Schottky barrier diodes (SBDs) have been fabricated using liquid-encapsulated Czochralski (LEC) grown silicon-doped GaAs (100) single-crystal substrates. The diodes were implanted using low-energy (70keV) alpha particles of fluence 1x10 14 , 1x10 15 and 1x10 16 cm -2 to study the effect of irradiation-induced defects very close to the interface...
The island film growth on a substrate surface with triangular lattice is studied by a Monte Carlo simulation. The influence of the incident energy of the deposition particle (ion, atom, or cluster) on the film morphology is considered. The results show that the incident energy of the deposition particle affects strongly the film growth process. The island morphologies have a significant change with...
We have explored the epitaxial growth of two types of insulators on silicon substrate. CaF 2 and MgO are able to block silicon diffusion to the growing surface forming stable interfaces type Si-Ca-F and MgO/YSi 2-x in molecular beam epitaxy (MBE) deposition process. We are able to establish proper condition of epitaxy for this two insulators by controlling nucleation process...
Pt/n-GaAs Schottky varactor diode is an important nonlinear element for frequency multipliers in the submillimeter wavelengths. In the fabrication process, SiO 2 -passivation is usually used to passivate the conductive active n-layer on the surface and reactive ion etching (RIE) technique is the standard technique to open Schottky contact area through the passivation. The main problem in the...
The deposition of thin layers of manganese and iron on sulphur-terminated InP(100) surfaces has been investigated by soft X-ray core level photoemission. The sulphur treatment was carried out in situ using an ultrahigh vacuum compatible electrochemical source. Thin metal layers of manganese and iron were deposited onto the sulphur-induced (2x1) surface reconstruction of both n- and p-type InP(100)...
Progress in ab initio theoretical modelling of semiconductor surfaces and interfaces is reviewed. Results for equilibrium atomic geometry, electronic structure and bonding, using the plane wave pseudopotential method, are presented for clean Si(001) and III-V(110) surfaces, dissociative adsorption of NH 3 on Si(001), dissociative adsorption of H 2 S on III-V(110), and adsorption of...
The measurements of the frequency dependence of MIS capacitance and conductance have been performed for the Au/Pd/Ti-SiO 2 -GaAs structures. The (100) oriented n-GaAs wafers with and without (NH 4 ) 2 S x surface treatments have been used. The anomalous frequency dispersion of MIS capacitance at positive biases and broad maximum of MIS conductance G m /ω versus...
We have developed for GaAs a new nitrogen chemical surface passivation. The passivation procedure that can be justified from chemical reasonings, consists of a wet treatment by a mixture of hydrazine and sodium sulfide solutions, and is proposed to produce an essentially Ga-terminated (100) surface covered with a monolayer of chemisorbed nitrogen. The as-treated surface reveals clear (1x1) RHEED pattern...
The influence of Na 2 S and (NH 4 ) 2 S treatments on the surface properties of GaSb have been investigated through the etch rate, ellipsometry and Schottky barrier measurements. XRD and TEM analysis were performed to examine the effect of sulfide pretreatment of GaSb substrate on the LPE growth of InGaAsSb/AlGaAsSb heterostructures and their structural quality. Additionally,...
In this paper we show that simple pre-epitaxial wet chemical treatment of GaAs substrates in Na 2 S-water solutions allows one to grow reproducibly by molecular beam epitaxy (MBE) ZnSe-based structures with significantly lowered stacking fault (SF) density down to ~3x10 5 cm -2 . This defect density is comparable with that obtained on the (2x4)As-stabilized surfaces of...
The recently reported contactless photoelectromagnetic (PEM) method of determining carrier lifetimes was used to investigate Ga:AS:Te and Si:B samples with polished and grinded surfaces. In the presented experiments the samples were illuminated with radiation of different wavelengths (and different absorption coefficients) emitted by diode lasers, argon and HeNe lasers acoustooptically modulated up...
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